IQE continues to support TriQuint Semiconductor...

Cardiff, UK - 27 January 2011: IQE announces that its manufacturing facility in
Somerset, New Jersey will support TriQuint Semiconductor with a range of GaN
based wafer products following its recent award of a US Air Force Research
Laboratory (AFRL) contract.

TriQuint has been awarded the Defense Production Act Title III gallium nitride
(GaN) manufacturing development contract, the overall goal of which is to
increase yields, lower costs of high power, high frequency 100mm Gallium Nitride
wafers and improve time-to-market cycles for defense and commercial GaN
integrated circuits.

Gallium nitride is a key process technology that is leading advanced
semiconductor amplifier design for high-end radio-frequency (RF) communications
applications. The material system has inherent advantages over other
technologies including high voltage operation, greater power density (more power
per square millimeter) and efficiency. The on-going development of GaN-based
devices is leading to new smaller, more efficient amplifiers aimed at reducing
system size, weight and power consumption.

Mr Alex Ceruzzi, VP and General Manager of IQE's New Jersey facility commented:

"IQE is proud of its close working relationship with TriQuint Semiconductor in
supplying reliable, high-quality products ranging from high volume GaAs based RF
materials to emerging technologies such as 100mm GaN epitaxial wafers. We
appreciate TriQuint's continued commitment in selecting IQE to support this key
programme."

TriQuint is a leading global provider of innovative RF solutions and foundry
services for the world's leading communications, defense and aerospace companies
and has more than 25 years' experience in successfully transferring new
technologies into volume manufacturing processes. The Company supplies RF
innovation for consumer retail products including mobile devices, wireless LAN,
triple-play CATV systems, optical network and wireless infrastructure
applications

IQE manufactures a range of advanced semiconductor materials and has closely
supported TriQuint with a number of products including GaN for a number of
years.

The programme is expected to conclude in 2013 and is divided into three phases
with specific goals and assessment criteria at each milestone. The overall aim
of the new contract is to demonstrate integrated device technology that meets
stringent goals in terms of performance, cost and capacity, and whilst the
initial work will be designed for defense applications, it is anticipated that
the technologies will eventually migrate to future generations of consumer and
communications devices.




CONTACTS:

Technical/Sales: IQE RF ([phone])

Ivan Eliashevich


Press: IQE plc ([phone])

Chris Meadows









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Source: IQE plc via Thomson Reuters ONE

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